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Part Details for IXTH200N10T by Littelfuse Inc
Overview of IXTH200N10T by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXTH200N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1485
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Newark | Mosfet, N-Ch, 100V, 200A, 175Deg C, 550W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:200A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTH200N10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 300 |
|
$4.7200 / $8.8800 | Buy Now |
|
DISTI #
29AK0471
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Newark | Mosfet, 200A, 100V, 550W, To-247 Rohs Compliant: Yes |Littelfuse IXTH200N10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$4.8100 / $9.0600 | Buy Now |
|
DISTI #
IXTH200N10T-ND
|
DigiKey | MOSFET N-CH 100V 200A TO247 Min Qty: 1 Lead time: 27 Weeks Container: Tube |
830 In Stock |
|
$4.8129 / $9.0600 | Buy Now |
Part Details for IXTH200N10T
IXTH200N10T CAD Models
IXTH200N10T Part Data Attributes
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IXTH200N10T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTH200N10T
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 200 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 140 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 550 W | |
| Pulsed Drain Current-Max (IDM) | 500 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTH200N10T
This table gives cross-reference parts and alternative options found for IXTH200N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH200N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFP180N10T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTH200N10T vs IXFP180N10T2 |
| IXFA180N10T2 | Power Field-Effect Transistor, 180A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263AA, 3 PIN | IXYS Corporation | IXTH200N10T vs IXFA180N10T2 |
| IXTH200N10T | Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXTH200N10T vs IXTH200N10T |
| IXTV200N10T | Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN | IXYS Corporation | IXTH200N10T vs IXTV200N10T |
| CSD19532KTTT | 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | IXTH200N10T vs CSD19532KTTT |