Part Details for IXTA36N30P by IXYS Corporation
Overview of IXTA36N30P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXTA36N30P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71AH4568
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Newark | Mosfet, N-Ch, 300V, 36A, To-263 Rohs Compliant: Yes |Ixys Semiconductor IXTA36N30P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.8600 / $5.1400 | Buy Now |
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DISTI #
747-IXTA36N30P
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Mouser Electronics | MOSFETs MOSFET N-CH 300V 36A RoHS: Compliant | 3039 |
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$2.4000 / $4.9400 | Buy Now |
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Future Electronics | N-Channel 300 V 120 mΩ 70 nC PolarHT Mosfet - TO-263 (D2PAK) RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Lead time: 40 Weeks Container: Tube | 0Tube |
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$2.3400 / $2.5600 | Buy Now |
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DISTI #
IXTA36N30P
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TTI | MOSFETs MOSFET N-CH 300V 36A Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.3300 / $2.9800 | Buy Now |
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DISTI #
IXTA36N30P
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TME | Transistor: N-MOSFET, PolarHT™, unipolar, 300V, 36A, 300W, TO263 Min Qty: 1 | 289 |
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$3.0400 / $4.7000 | Buy Now |
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New Advantage Corporation | MOSFET DIS.36A 300V N-CH TO263(D2PAK) POLARHT SMT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 270 |
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$5.6600 / $6.0600 | Buy Now |
Part Details for IXTA36N30P
IXTA36N30P CAD Models
IXTA36N30P Part Data Attributes
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IXTA36N30P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA36N30P
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA36N30P
This table gives cross-reference parts and alternative options found for IXTA36N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA36N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXTA36N30P vs IXTP36N30P |
| IXTQ36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXTA36N30P vs IXTQ36N30P |
| IXTA36N30P | Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTA36N30P vs IXTA36N30P |
| IXFM35N30L | Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | IXYS Corporation | IXTA36N30P vs IXFM35N30L |