| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
03AH1288
|
Newark | Mosfet, N-Ch, 100V, 130A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:130A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTA130N10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 20 |
|
$2.0200 | Buy Now | |
|
DISTI #
IXTA130N10T-ND
|
DigiKey | MOSFET N-CH 100V 130A TO263 Min Qty: 1 Lead time: 27 Weeks Container: Tube |
484 In Stock |
|
$2.2310 / $4.5800 | Buy Now |
|
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|---|---|
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Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
LITTELFUSE INC
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|
Package Description
|
,
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Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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Samacsys Manufacturer
|
LITTELFUSE
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
|
500 mJ
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
130 A
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Drain-source On Resistance-Max
|
0.0091 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
95 pF
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JEDEC-95 Code
|
TO-263AB
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JESD-30 Code
|
R-PSSO-G2
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JESD-609 Code
|
e3
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Moisture Sensitivity Level
|
1
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
|
175 °C
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Operating Temperature-Min
|
-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Peak Reflow Temperature (Cel)
|
260
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Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
360 W
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Pulsed Drain Current-Max (IDM)
|
350 A
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Surface Mount
|
YES
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Terminal Finish
|
Matte Tin (Sn)
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Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
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Time@Peak Reflow Temperature-Max (s)
|
10
|
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Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTQ130N10T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXTA130N10T vs IXTQ130N10T |
| IXFP130N10T | Power Field-Effect Transistor, | Littelfuse Inc | IXTA130N10T vs IXFP130N10T |
| IXTP130N10T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTA130N10T vs IXTP130N10T |
| IXTP130N10T | Power Field-Effect Transistor, | Littelfuse Inc | IXTA130N10T vs IXTP130N10T |
| IXFP130N10T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTA130N10T vs IXFP130N10T |
| IXFP130N10T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA130N10T vs IXFP130N10T2 |
| IXTA130N10T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXTA130N10T vs IXTA130N10T |
| IXTH130N10T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXTA130N10T vs IXTH130N10T |
| IXTP220N075T | Power Field-Effect Transistor, 130A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTA130N10T vs IXTP220N075T |
| IXTH130N10T | Power Field-Effect Transistor, | Littelfuse Inc | IXTA130N10T vs IXTH130N10T |