Datasheets
IXTA110N055T7 by:

Power Field-Effect Transistor,

Part Details for IXTA110N055T7 by Littelfuse Inc

Overview of IXTA110N055T7 by Littelfuse Inc

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Part Details for IXTA110N055T7

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IXTA110N055T7 Part Data Attributes

IXTA110N055T7 Littelfuse Inc
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IXTA110N055T7 Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Obsolete
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 750 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 140 pF
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 300 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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