-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH1280
|
Newark | Discmsft Nchtrenchgate-Gen2 To-263D2/ Tube |Littelfuse IXTA110N055T2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.4700 / $2.0900 | Buy Now |
DISTI #
IXTA110N055T2-ND
|
DigiKey | MOSFET N-CH 55V 110A TO263 Min Qty: 300 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
|
$1.4633 | Buy Now |
DISTI #
V79:2366_29285799
|
Arrow Electronics | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Date Code: 1947 | Americas - 50 |
|
$1.4320 / $1.7720 | Buy Now |
DISTI #
83643896
|
Verical | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK Min Qty: 5 Package Multiple: 1 Date Code: 1947 | Americas - 50 |
|
$1.4320 / $1.7720 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IXTA110N055T2
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTA110N055T2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | TO-263, 3/2 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0066 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 105 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTA110N055T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA110N055T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTA110N055T2 | IXYS Corporation | $1.3452 | Power Field-Effect Transistor, 110A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | IXTA110N055T2 vs IXTA110N055T2 |
2SK4044 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | IXTA110N055T2 vs 2SK4044 |
934067892115 | Nexperia | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | IXTA110N055T2 vs 934067892115 |
IPD90N06S3L-07 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IXTA110N055T2 vs IPD90N06S3L-07 |
NP90N06VLG-E1-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | IXTA110N055T2 vs NP90N06VLG-E1-AY |
IPD90N06S3L-07TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IXTA110N055T2 vs IPD90N06S3L-07TR |