Part Details for IXKH24N60C5 by IXYS Corporation
Overview of IXKH24N60C5 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXKH24N60C5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXKH24N60C5
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Mouser Electronics | MOSFETs 24 Amps 600V RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
IXKH24N60C5
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TME | Transistor: N-MOSFET, unipolar, 600V, 24A, 250W, TO247-3 Min Qty: 1 | 0 |
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$2.8500 / $3.9900 | RFQ |
Part Details for IXKH24N60C5
IXKH24N60C5 CAD Models
IXKH24N60C5 Part Data Attributes
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IXKH24N60C5
IXYS Corporation
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Datasheet
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Compare Parts:
IXKH24N60C5
IXYS Corporation
Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 522 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXKH24N60C5
This table gives cross-reference parts and alternative options found for IXKH24N60C5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXKH24N60C5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | IXKH24N60C5 vs SIHG22N65E-GE3 |
| IPB60R160C6ATMA1 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXKH24N60C5 vs IPB60R160C6ATMA1 |
| IXKP24N60C5 | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXKH24N60C5 vs IXKP24N60C5 |
| TK25V60X5 | Nch 500V<VDSS≤700V, Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IXKH24N60C5 vs TK25V60X5 |
| IXKH24N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | IXKH24N60C5 vs IXKH24N60C5 |
| IPB60R160C6 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IXKH24N60C5 vs IPB60R160C6 |