Part Details for IXGN82N120B3H1 by IXYS Corporation
Overview of IXGN82N120B3H1 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IXGN82N120B3H1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXGN82N120B3H1-ND
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DigiKey | IGBT MOD 1200V 145A 595W SOT227B Min Qty: 10 Lead time: 52 Weeks Container: Tube | Temporarily Out of Stock |
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$29.1590 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 27 Weeks Container: Tube | 0Tube |
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$39.6400 | Buy Now |
Part Details for IXGN82N120B3H1
IXGN82N120B3H1 CAD Models
IXGN82N120B3H1 Part Data Attributes
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IXGN82N120B3H1
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXGN82N120B3H1
IXYS Corporation
Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 145 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 595 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 760 ns | |
| Turn-on Time-Nom (ton) | 112 ns |
Alternate Parts for IXGN82N120B3H1
This table gives cross-reference parts and alternative options found for IXGN82N120B3H1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGN82N120B3H1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT100GN120JDQ4 | Insulated Gate Bipolar Transistor, 153A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | IXGN82N120B3H1 vs APT100GN120JDQ4 |
| APT100GN120JDQ4 | Insulated Gate Bipolar Transistor, 153A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXGN82N120B3H1 vs APT100GN120JDQ4 |
| APT75GN120JDQ3 | Insulated Gate Bipolar Transistor, 124A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4 | Microsemi Corporation | IXGN82N120B3H1 vs APT75GN120JDQ3 |