Part Details for IXFT23N80Q by Littelfuse Inc
Overview of IXFT23N80Q by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFT23N80Q
IXFT23N80Q CAD Models
IXFT23N80Q Part Data Attributes
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IXFT23N80Q
Littelfuse Inc
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Datasheet
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IXFT23N80Q
Littelfuse Inc
Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT23N80Q
This table gives cross-reference parts and alternative options found for IXFT23N80Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT23N80Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH24N80P | IXYS Corporation | $2.6297 | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXFT23N80Q vs IXFH24N80P |
| IXFT24N80P | IXYS Corporation | $5.8678 | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXFT23N80Q vs IXFT24N80P |
| IXFH24N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXFT23N80Q vs IXFH24N80P |
| IXFK25N80 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 25A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXFT23N80Q vs IXFK25N80 |
| IXFK24N80P | IXYS Corporation | $5.5252 | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXFT23N80Q vs IXFK24N80P |
| IXFH23N80Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXFT23N80Q vs IXFH23N80Q |
| APT24M80S | Microchip Technology Inc | $11.8123 | Power Field-Effect Transistor, 25A I(D), 800V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFT23N80Q vs APT24M80S |
| APT22F80S | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 800V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 | IXFT23N80Q vs APT22F80S |
| APT24M80B | Microchip Technology Inc | $10.7393 | Power Field-Effect Transistor, 25A I(D), 800V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | IXFT23N80Q vs APT24M80B |
| IXFH23N80Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXFT23N80Q vs IXFH23N80Q |