Part Details for IXFT100N30X3HV by Littelfuse Inc
Overview of IXFT100N30X3HV by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFT100N30X3HV
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0913
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Newark | Discmsft Nchultrjnctn X3Class To-268Aa/ Tube |Littelfuse IXFT100N30X3HV RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.7800 / $9.4500 | Buy Now |
DISTI #
IXFT100N30X3HV-ND
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DigiKey | MOSFET N-CH 300V 100A TO268HV Min Qty: 1 Lead time: 32 Weeks Container: Tube |
342 In Stock |
|
$9.0002 / $14.2100 | Buy Now |
Part Details for IXFT100N30X3HV
IXFT100N30X3HV CAD Models
IXFT100N30X3HV Part Data Attributes
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IXFT100N30X3HV
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFT100N30X3HV
Littelfuse Inc
Power Field-Effect Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3 pF | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 480 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |