Datasheets
IXFT100N30X3HV by:

Power Field-Effect Transistor,

Part Details for IXFT100N30X3HV by Littelfuse Inc

Overview of IXFT100N30X3HV by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFT100N30X3HV

Part # Distributor Description Stock Price Buy
DISTI # 03AH0913
Newark Discmsft Nchultrjnctn X3Class To-268Aa/ Tube |Littelfuse IXFT100N30X3HV RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $9.4500
  • 500 $8.7800
$8.7800 / $9.4500 Buy Now
DISTI # IXFT100N30X3HV-ND
DigiKey MOSFET N-CH 300V 100A TO268HV Min Qty: 1 Lead time: 32 Weeks Container: Tube 342
In Stock
  • 1 $14.2100
  • 30 $11.5040
  • 120 $10.8273
  • 510 $9.8123
  • 1,020 $9.0002
$9.0002 / $14.2100 Buy Now

Part Details for IXFT100N30X3HV

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IXFT100N30X3HV Part Data Attributes

IXFT100N30X3HV Littelfuse Inc
Buy Now Datasheet
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IXFT100N30X3HV Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 480 W
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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