Part Details for IXFN74N100X by Littelfuse Inc
Overview of IXFN74N100X by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFN74N100X
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH9902
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Newark | Mosfet Discrete Sot-227/ Tube |Littelfuse IXFN74N100X RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$73.7300 | Buy Now |
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DISTI #
75578124
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RS | MOSFET DISCRETE SOT-227 | Littelfuse IXFN74N100X Min Qty: 10 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$108.8100 | RFQ |
Part Details for IXFN74N100X
IXFN74N100X CAD Models
IXFN74N100X Part Data Attributes
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IXFN74N100X
Littelfuse Inc
Buy Now
Datasheet
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IXFN74N100X
Littelfuse Inc
Power Field-Effect Transistor, 74A I(D), 1000V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227, 4 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SOT-227, 4 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 74 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 48 pF | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1170 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |