Part Details for IXFN34N80 by IXYS Corporation
Overview of IXFN34N80 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN34N80
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN34N80-ND
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DigiKey | MOSFET N-CH 800V 34A SOT-227B Min Qty: 10 Lead time: 26 Weeks Container: Tube | Limited Supply - Call |
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$22.0220 | Buy Now |
DISTI #
747-IXFN34N80
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Mouser Electronics | MOSFET Modules 34 Amps 800V 0.24 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFN34N80
IXFN34N80 CAD Models
IXFN34N80 Part Data Attributes
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IXFN34N80
IXYS Corporation
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Datasheet
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Compare Parts:
IXFN34N80
IXYS Corporation
Power Field-Effect Transistor, 34A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.24 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFN34N80
This table gives cross-reference parts and alternative options found for IXFN34N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN34N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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APT8014JLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 42A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | IXFN34N80 vs APT8014JLL |
IXFL60N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 40A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN | IXFN34N80 vs IXFL60N80P |
IXKN45N80C | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXFN34N80 vs IXKN45N80C |
IXFN50N80Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXFN34N80 vs IXFN50N80Q2 |
APT8020JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | IXFN34N80 vs APT8020JFLL |
APT8020JFLL | Microchip Technology Inc | $42.9640 | Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFN34N80 vs APT8020JFLL |
APT8014JFLL | Microchip Technology Inc | $64.1258 | Power Field-Effect Transistor, 42A I(D), 800V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFN34N80 vs APT8014JFLL |
IXFN50N80Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXFN34N80 vs IXFN50N80Q2 |
APT8024JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 29A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | IXFN34N80 vs APT8024JFLL |
APT8024JFLL | Microchip Technology Inc | $47.5913 | Power Field-Effect Transistor, 29A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFN34N80 vs APT8024JFLL |