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Transistors Power Field-Effect Transistors IXFN102N30P

IXFN102N30P
Description: Power Field-Effect Transistor, 88A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Overview of IXFN102N30P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 6 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFN102N30P by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXFN102N30P
Mouser Electronics MOSFET Modules 102 Amps 300V 0.033 Rds RoHS: Compliant 0
  • 300 $18.2600
$18.2600 Order Now
Future Electronics Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Lead time: 40 Weeks Container: Tube 0
Tube
  • 10 $18.2000
  • 30 $18.0300
  • 50 $17.9500
  • 100 $17.8500
  • 200 $17.6800
$17.6800 / $18.2000 Buy Now
Future Electronics Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 200 Lead time: 40 Weeks Container: Tube 0
Tube
  • 200 $20.5700
$20.5700 Buy Now
DISTI # IXFN102N30P
TTI MOSFET Modules 102 Amps 300V 0.033 Rds Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $18.0300
$18.0300 Buy Now
DISTI # IXFN102N30P
TME Module, single transistor, 300V, 86A, SOT227B, screw, Idm: 250A Min Qty: 1 0
  • 1 $32.7700
  • 3 $29.5400
  • 10 $26.0800
$26.0800 / $32.7700 RFQ
New Advantage Corporation MOSFET MOD.88A 300V N-CH SOT227B HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 100 150
  • 100 $47.1300
  • 150 $43.9900
$43.9900 / $47.1300 Buy Now

CAD Models for IXFN102N30P by IXYS Corporation
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Part Data Attributes for IXFN102N30P by IXYS Corporation
Parametric Data

IXFN102N30P
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
PLASTIC, MINIBLOC-4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
5000 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
300 V
Drain Current-Max (ID)
88 A
Drain-source On Resistance-Max
0.033 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PUFM-X4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
250 A
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Surface Mount
NO
Terminal Finish
NICKEL
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXFN102N30P
    IXYS Corporation
    Power Field-Effect Transistor, 88A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
    VS

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