Part Details for IXFN100N10S1 by IXYS Corporation
Overview of IXFN100N10S1 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFN100N10S1
IXFN100N10S1 CAD Models
IXFN100N10S1 Part Data Attributes
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IXFN100N10S1
IXYS Corporation
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Datasheet
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IXFN100N10S1
IXYS Corporation
Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFN100N10S1
This table gives cross-reference parts and alternative options found for IXFN100N10S1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN100N10S1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT6018JN | Power Field-Effect Transistor, 35A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN100N10S1 vs APT6018JN |
APT5013JNF | 42 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXFN100N10S1 vs APT5013JNF |
NDT453N/S62Z | 8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | Texas Instruments | IXFN100N10S1 vs NDT453N/S62Z |
APT5012JN | Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN100N10S1 vs APT5012JN |
IXFN48N50Q | Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN100N10S1 vs IXFN48N50Q |
IXFN55N50F | Power Field-Effect Transistor, 55A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN100N10S1 vs IXFN55N50F |
APT5012JNU2 | Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Advanced Power Technology | IXFN100N10S1 vs APT5012JNU2 |
IXFE48N50Q | Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN100N10S1 vs IXFE48N50Q |
IXFN80N50Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFN100N10S1 vs IXFN80N50Q3 |
IXFN106N20 | Power Field-Effect Transistor, 106A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN100N10S1 vs IXFN106N20 |