Datasheets
IXFN100N10S1 by: IXYS Corporation

Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Part Details for IXFN100N10S1 by IXYS Corporation

Overview of IXFN100N10S1 by IXYS Corporation

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Part Details for IXFN100N10S1

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IXFN100N10S1 Part Data Attributes

IXFN100N10S1 IXYS Corporation
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IXFN100N10S1 IXYS Corporation Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description FLANGE MOUNT, R-PUFM-X4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFN100N10S1

This table gives cross-reference parts and alternative options found for IXFN100N10S1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN100N10S1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT6018JN Power Field-Effect Transistor, 35A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFN100N10S1 vs APT6018JN
APT5013JNF 42 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET Microsemi Corporation IXFN100N10S1 vs APT5013JNF
NDT453N/S62Z 8A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 Texas Instruments IXFN100N10S1 vs NDT453N/S62Z
APT5012JN Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFN100N10S1 vs APT5012JN
IXFN48N50Q Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXFN100N10S1 vs IXFN48N50Q
IXFN55N50F Power Field-Effect Transistor, 55A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFN100N10S1 vs IXFN55N50F
APT5012JNU2 Power Field-Effect Transistor, 43A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Advanced Power Technology IXFN100N10S1 vs APT5012JNU2
IXFE48N50Q Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXFN100N10S1 vs IXFE48N50Q
IXFN80N50Q3 Power Field-Effect Transistor, Littelfuse Inc IXFN100N10S1 vs IXFN80N50Q3
IXFN106N20 Power Field-Effect Transistor, 106A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXFN100N10S1 vs IXFN106N20

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