Part Details for IXFK48N55 by Littelfuse Inc
Overview of IXFK48N55 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Part Details for IXFK48N55
IXFK48N55 CAD Models
IXFK48N55 Part Data Attributes
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IXFK48N55
Littelfuse Inc
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Datasheet
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IXFK48N55
Littelfuse Inc
Power Field-Effect Transistor, 48A I(D), 550V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 550 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK48N55
This table gives cross-reference parts and alternative options found for IXFK48N55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK48N55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT6017B2LLG | Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | IXFK48N55 vs APT6017B2LLG |
| APT56M50B2 | Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFK48N55 vs APT56M50B2 |
| APT6017JFLL | Power Field-Effect Transistor, 31A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFK48N55 vs APT6017JFLL |
| APT6013B2LL | Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | IXFK48N55 vs APT6013B2LL |
| APT8024B2FLLG | Power Field-Effect Transistor, 31A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, T-MAX-3 | Microsemi Corporation | IXFK48N55 vs APT8024B2FLLG |
| APT6017LLLG | Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK48N55 vs APT6017LLLG |
| APT8020B2LLG | Power Field-Effect Transistor, 38A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 | Microsemi Corporation | IXFK48N55 vs APT8020B2LLG |
| APT42F50S | Power Field-Effect Transistor, 42A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFK48N55 vs APT42F50S |
| APT8024B2LL | Power Field-Effect Transistor, 31A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | IXFK48N55 vs APT8024B2LL |
| APT56F50B2 | Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | Microchip Technology Inc | IXFK48N55 vs APT56F50B2 |