Part Details for IXFK27N80Q by Littelfuse Inc
Overview of IXFK27N80Q by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFK27N80Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFK27N80Q-ND
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DigiKey | MOSFET N-CH 800V 27A TO264AA Min Qty: 1 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$18.6672 / $29.7200 | Buy Now |
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DISTI #
75578002
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RS | DiscMSFT NCh HiPerFET-Q Class TO-264(3) | Littelfuse IXFK27N80Q Min Qty: 25 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$28.8700 | RFQ |
Part Details for IXFK27N80Q
IXFK27N80Q CAD Models
IXFK27N80Q Part Data Attributes
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IXFK27N80Q
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFK27N80Q
Littelfuse Inc
Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 108 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK27N80Q
This table gives cross-reference parts and alternative options found for IXFK27N80Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK27N80Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | IXFK27N80Q vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFK27N80Q vs IPB80N06S2LH5ATMA1 |
| FQA11N90 | Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | IXFK27N80Q vs FQA11N90 |
| FQAF7N80 | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | IXFK27N80Q vs FQAF7N80 |
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFK27N80Q vs SPP80N03S2L-05 |
| NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFK27N80Q vs NDP7050L |
| FQAF65N06 | Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | IXFK27N80Q vs FQAF65N06 |
| FDP14N60 | Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFK27N80Q vs FDP14N60 |
| IXFH32N50 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXYS Corporation | IXFK27N80Q vs IXFH32N50 |
| IXFX66N50Q2 | Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFK27N80Q vs IXFX66N50Q2 |