Datasheets
IXFK120N30T by:

Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN

Part Details for IXFK120N30T by IXYS Corporation

Overview of IXFK120N30T by IXYS Corporation

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Price & Stock for IXFK120N30T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFK120N30T
Mouser Electronics MOSFETs 120A 300V RoHS: Compliant 0
  • 300 $10.8100
$10.8100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube 0
Tube
  • 25 $10.1200
$10.1200 Buy Now
DISTI # IXFK120N30T
TTI MOSFETs 120A 300V Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $8.8100
  • 500 $8.6400
$8.6400 / $8.8100 Buy Now
DISTI # IXFK120N30T
TME Transistor: N-MOSFET, unipolar, 300V, 120A, 960W, TO264 Min Qty: 1 1
  • 1 $16.6000
  • 3 $14.8800
  • 10 $13.1500
  • 25 $11.8600
$11.8600 / $16.6000 Buy Now
New Advantage Corporation MOSFET DIS.120A 300V N-CH TO264 GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 20
  • 16 $21.9600
  • 20 $20.5000
$20.5000 / $21.9600 Buy Now

Part Details for IXFK120N30T

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IXFK120N30T Part Data Attributes

IXFK120N30T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFK120N30T IXYS Corporation Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-264AA
Package Description PLASTIC, TO-264, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 960 W
Pulsed Drain Current-Max (IDM) 330 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK120N30T

This table gives cross-reference parts and alternative options found for IXFK120N30T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK120N30T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFX120N30T Littelfuse Inc $11.6813 Power Field-Effect Transistor, IXFK120N30T vs IXFX120N30T
IXFX120N30T IXYS Corporation $6.7014 Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXFK120N30T vs IXFX120N30T
IXTK110N30 IXYS Corporation Check for Price Power Field-Effect Transistor, 110A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXFK120N30T vs IXTK110N30
IXTK110N30 Littelfuse Inc Check for Price Power Field-Effect Transistor, 110A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXFK120N30T vs IXTK110N30
IXFK120N30T Littelfuse Inc $11.8408 Power Field-Effect Transistor, IXFK120N30T vs IXFK120N30T

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