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Transistors Power Field-Effect Transistors IXFK120N30T

Transistors
IXFK120N30T
Description: Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN

Overview of IXFK120N30T by IXYS Corporation

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Price & Stock for IXFK120N30T by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXFK120N30T
Mouser Electronics MOSFETs 120A 300V RoHS: Compliant 0
  • 300 $10.8100
$10.8100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube 0
Tube
  • 25 $10.1200
$10.1200 Buy Now
DISTI # IXFK120N30T
TTI MOSFETs 120A 300V Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $9.3400
  • 500 $9.0500
$9.0500 / $9.3400 Buy Now
DISTI # IXFK120N30T
TME Transistor: N-MOSFET, unipolar, 300V, 120A, 960W, TO264 Min Qty: 1 1
  • 1 $17.1900
  • 3 $15.4000
  • 10 $13.6200
  • 25 $12.2800
$12.2800 / $17.1900 Buy Now
New Advantage Corporation MOSFET DIS.120A 300V N-CH TO264 GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 20
  • 16 $22.6300
  • 20 $21.1200
$21.1200 / $22.6300 Buy Now

CAD Models for IXFK120N30T by IXYS Corporation
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Part Data Attributes for IXFK120N30T by IXYS Corporation
Parametric Data

IXFK120N30T
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-264AA
Package Description
PLASTIC, TO-264, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
2500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
300 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.024 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-264AA
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
960 W
Pulsed Drain Current-Max (IDM)
330 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXFK120N30T
    IXYS Corporation
    Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
    VS

Alternate Parts for IXFK120N30T

This table gives cross-reference parts and alternative options found for IXFK120N30T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK120N30T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTK110N30 Power Field-Effect Transistor, 110A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXYS Corporation IXFK120N30T vs IXTK110N30
IXFX120N30T Power Field-Effect Transistor, Littelfuse Inc IXFK120N30T vs IXFX120N30T
IXFX120N30T Power Field-Effect Transistor, 120A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFK120N30T vs IXFX120N30T
IXFK120N30T Power Field-Effect Transistor, Littelfuse Inc IXFK120N30T vs IXFK120N30T

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