There are no models available for this part yet.
Overview of IXFK100N25 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IXFK100N25 by IXYS Corporation
Part Data Attributes for IXFK100N25 by IXYS Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
IXYS CORP
|
Part Package Code
|
TO-264
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
3000 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
250 V
|
Drain Current-Max (ID)
|
100 A
|
Drain-source On Resistance-Max
|
0.027 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-264
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
560 W
|
Pulsed Drain Current-Max (IDM)
|
400 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IXFK100N25
This table gives cross-reference parts and alternative options found for IXFK100N25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK100N25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STP7NK40Z | N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package | STMicroelectronics | IXFK100N25 vs STP7NK40Z |
FQP5P20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFK100N25 vs FQP5P20 |
IXFH16N50P3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXFK100N25 vs IXFH16N50P3 |
FQP6N60C | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFK100N25 vs FQP6N60C |
STW10NK80Z | N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | STMicroelectronics | IXFK100N25 vs STW10NK80Z |
IXFK60N55Q2 | Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | IXFK100N25 vs IXFK60N55Q2 |
IRLSZ34 | Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IXFK100N25 vs IRLSZ34 |
IRFP250B | Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | IXFK100N25 vs IRFP250B |
IXFH20N60Q | Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | IXFK100N25 vs IXFH20N60Q |
PHD27NQ10T/T3 | 28A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IXFK100N25 vs PHD27NQ10T/T3 |