Part Details for IXFH8N80S by IXYS Corporation
Overview of IXFH8N80S by IXYS Corporation
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Applications
Energy and Power Systems
Renewable Energy
Part Details for IXFH8N80S
IXFH8N80S CAD Models
IXFH8N80S Part Data Attributes
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IXFH8N80S
IXYS Corporation
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Datasheet
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IXFH8N80S
IXYS Corporation
Power Field-Effect Transistor, 8A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247AD | |
Package Description | FLANGE MOUNT, R-PSFM-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |