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Transistors Power Field-Effect Transistors IXFH6N90

Transistors
IXFH6N90
Description: Power Field-Effect Transistor, 6A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Overview of IXFH6N90 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IXFH6N90 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 900V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 60
  • 1 $6.3000
  • 3 $4.2000
  • 7 $3.1500
$3.1500 / $6.3000 Buy Now

CAD Models for IXFH6N90 by IXYS Corporation
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Part Data Attributes for IXFH6N90 by IXYS Corporation
Parametric Data

IXFH6N90
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-247
Package Description
TO-247, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
900 V
Drain Current-Max (ID)
6 A
Drain-source On Resistance-Max
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
180 W
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IXFH6N90
    IXYS Corporation
    Power Field-Effect Transistor, 6A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
    VS

Alternate Parts for IXFH6N90

This table gives cross-reference parts and alternative options found for IXFH6N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH6N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXFH6N90 Power Field-Effect Transistor, 6A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IXFH6N90 vs IXFH6N90
Part Number Description Manufacturer Compare
IXFH6N90 Power Field-Effect Transistor, 6A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IXFH6N90 vs IXFH6N90

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