Datasheets
IXFH320N10T2 by:

Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

Part Details for IXFH320N10T2 by IXYS Corporation

Overview of IXFH320N10T2 by IXYS Corporation

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Price & Stock for IXFH320N10T2

Part # Distributor Description Stock Price Buy
DISTI # 71AH4546
Newark Mosfet, N-Ch, 100V, 320A, To-247 Rohs Compliant: Yes |Ixys Semiconductor IXFH320N10T2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 15
  • 1 $16.0900
  • 10 $15.0300
  • 25 $14.0300
  • 60 $13.0300
  • 120 $13.0200
  • 270 $12.2500
  • 510 $12.0400
$12.0400 / $16.0900 Buy Now
DISTI # 747-IXFH320N10T2
Mouser Electronics MOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A RoHS: Compliant 2696
  • 1 $14.9000
  • 10 $14.8900
  • 30 $9.6100
  • 60 $9.6000
  • 120 $9.3000
  • 270 $9.1200
$9.1200 / $14.9000 Buy Now
Quest Components   656
  • 1 $21.5220
  • 291 $16.6796
  • 601 $16.1415
$16.1415 / $21.5220 Buy Now
DISTI # IXFH320N10T2
TTI MOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A Min Qty: 30 Package Multiple: 30 Container: Tube Americas - 240
In Stock
  • 30 $9.5100
  • 60 $9.3300
  • 120 $9.1200
$9.1200 / $9.5100 Buy Now
DISTI # IXFH320N10T2
TME Transistor: N-MOSFET, unipolar, 100V, 320A, 1000W, TO247-3, 98ns Min Qty: 1 0
  • 1 $14.5400
  • 10 $12.2200
  • 30 $11.5800
  • 510 $10.0500
  • 1,020 $10.0100
$10.0100 / $14.5400 RFQ
Chip 1 Exchange INSTOCK 14259
RFQ
New Advantage Corporation MOSFET DIS.320A 100V N-CH TO247-3 TRENCHT2 THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 8617
  • 100 $13.9200
  • 8,617 $12.9900
$12.9900 / $13.9200 Buy Now

Part Details for IXFH320N10T2

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IXFH320N10T2 Part Data Attributes

IXFH320N10T2 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFH320N10T2 IXYS Corporation Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 320 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1000 W
Pulsed Drain Current-Max (IDM) 800 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFH320N10T2

This table gives cross-reference parts and alternative options found for IXFH320N10T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH320N10T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFH320N10T2 Power Field-Effect Transistor, Littelfuse Inc IXFH320N10T2 vs IXFH320N10T2
IXFT320N10T2 Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation IXFH320N10T2 vs IXFT320N10T2

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