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Transistors Power Field-Effect Transistors IXFH110N10P

IXFH110N10P
Description: Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

Overview of IXFH110N10P by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 6 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IXFH110N10P by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # IXFH110N10P-ND
DigiKey MOSFET N-CH 100V 110A TO247AD Min Qty: 30 Lead time: 44 Weeks Container: Tube Temporarily Out of Stock
  • 30 $6.0003
  • 90 $5.3687
  • 300 $5.0529
  • 750 $4.7371
  • 1,500 $4.2634
$4.2634 / $6.0003 Buy Now
Future Electronics MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 44 Weeks Container: Tube 0
Tube
  • 30 $5.1200
  • 90 $4.9900
  • 150 $4.9200
  • 600 $4.7600
  • 900 $4.6500
$4.6500 / $5.1200 Buy Now

CAD Models for IXFH110N10P by Littelfuse Inc
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Part Data Attributes for IXFH110N10P by Littelfuse Inc
Parametric Data

IXFH110N10P
Littelfuse Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1000 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
110 A
Drain-source On Resistance-Max
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
250 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXFH110N10P
    Littelfuse Inc
    Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
    VS

Alternate Parts for IXFH110N10P

This table gives cross-reference parts and alternative options found for IXFH110N10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH110N10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTQ110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc IXFH110N10P vs IXTQ110N10P
IXFH110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation IXFH110N10P vs IXFH110N10P
IXFV110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IXFH110N10P vs IXFV110N10P
IXTT110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXFH110N10P vs IXTT110N10P
IXTQ110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation IXFH110N10P vs IXTQ110N10P
IXTT110N10P Power Field-Effect Transistor, 110A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFH110N10P vs IXTT110N10P

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