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Transistors / IGBTs / IXBT42N170
Datasheets
IXBT42N170 by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Insulated Gate Bipolar Transistor, 80A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN

Part Details for IXBT42N170 by IXYS Corporation

Results Overview of IXBT42N170 by IXYS Corporation

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IXBT42N170 Information

IXBT42N170 by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXBT42N170

Part # Distributor Description Stock Price Buy
DISTI # IXBT42N170-ND
DigiKey IGBT 1700V 80A TO-268AA Min Qty: 1 Lead time: 39 Weeks Container: Tube 200
In Stock
  • 1 $27.6000
  • 30 $17.8437
  • 120 $17.0088
$17.0088 / $27.6000 Buy Now
DISTI # 747-IXBT42N170
Mouser Electronics IGBTs BIMOSFET 1700V 75A RoHS: Compliant 4122
  • 1 $27.8900
  • 10 $27.8800
  • 30 $20.4900
  • 120 $19.7500
  • 270 $19.2500
$19.2500 / $27.8900 Buy Now
Future Electronics IXBT Series 1700 Vce 75 A 45 ns t(on) Bipolar MOS Transistor - TO-268 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 300 Lead time: 39 Weeks Container: Tube 0
Tube
  • 300 $17.6800
$17.6800 Buy Now
DISTI # IXBT42N170
TTI IGBTs BIMOSFET 1700V 75A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $16.9300
  • 510 $16.5900
$16.5900 / $16.9300 Buy Now
DISTI # IXBT42N170
TME Transistor: IGBT, BiMOSFET™, 1.7kV, 42A, 360W, D3PAK Min Qty: 1 0
  • 1 $28.8300
  • 3 $25.4400
  • 10 $22.8800
  • 30 $21.3400
$21.3400 / $28.8300 RFQ
DISTI # IXBT42N170
IBS Electronics HIGH VOLTAGE SERIES - 1600V - 1700V REVERSE CONDUCTING (BIMOSFET&#x2122, ) IGBTS TO-268 ROHS Min Qty: 300 Package Multiple: 1 0
  • 300 $23.5144
$23.5144 Buy Now
New Advantage Corporation IGBT DIS.DIODE SINGLE 42A 1700V BIMOSFET TO268(D3P RoHS: Compliant Min Qty: 1 Package Multiple: 100 200
  • 100 $44.8200
  • 200 $41.8400
$41.8400 / $44.8200 Buy Now
Sense Electronic Company Limited TO-268AA 1992
RFQ

Part Details for IXBT42N170

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IXBT42N170 Part Data Attributes

Parametric Data
IXBT42N170 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXBT42N170 IXYS Corporation Insulated Gate Bipolar Transistor, 80A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-268AA
Package Description PLASTIC, TO-268, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1070 ns
Turn-on Time-Nom (ton) 224 ns

IXBT42N170 Related Parts

IXBT42N170 Frequently Asked Questions (FAQ)

  • The maximum allowable power dissipation for the IXBT42N170 is dependent on the thermal impedance of the module and the ambient temperature. According to the datasheet, the maximum power dissipation is approximately 420W at a case temperature of 80°C.

  • To ensure proper thermal management, it is recommended to attach a heat sink to the module, and apply a thermal interface material (TIM) to the base plate. The heat sink should be designed to provide adequate airflow and heat dissipation. Additionally, the module should be mounted on a thermally conductive surface, and the ambient temperature should be kept as low as possible.

  • The recommended gate drive voltage for the IXBT42N170 is +15V to -10V, with a maximum gate current of ±20mA. It is recommended to use a gate driver IC specifically designed for IGBTs, and to ensure that the gate drive voltage is within the recommended range to prevent damage to the module.

  • Yes, the IXBT42N170 can be paralleled for higher current applications. However, it is recommended to ensure that the modules are matched in terms of their electrical characteristics, and that the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management system should be designed to handle the increased power dissipation.

  • The recommended switching frequency for the IXBT42N170 depends on the specific application and the desired performance. However, as a general guideline, the switching frequency should be limited to 20kHz or less to minimize switching losses and ensure reliable operation.