Datasheets
ISL9V3040P3 by:

Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-220AB, PLASTICPACKAGE-3

Part Details for ISL9V3040P3 by Fairchild Semiconductor Corporation

Overview of ISL9V3040P3 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ISL9V3040P3

Part # Distributor Description Stock Price Buy
Quest Components 21 A, 390 V, N-CHANNEL IGBT, TO-220AB 12
  • 1 $3.4425
  • 4 $2.2950
  • 12 $1.7213
$1.7213 / $3.4425 Buy Now
Win Source Electronics IGBT 430V 21A 150W TO220AB 40000
  • 30 $1.8370
  • 70 $1.5080
  • 105 $1.4610
  • 145 $1.4130
  • 185 $1.3660
  • 245 $1.2250
$1.2250 / $1.8370 Buy Now

Part Details for ISL9V3040P3

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ISL9V3040P3 Part Data Attributes

ISL9V3040P3 Fairchild Semiconductor Corporation
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ISL9V3040P3 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-220AB, PLASTICPACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description PLASTICPACKAGE-3
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 21 A
Collector-Emitter Voltage-Max 450 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Fall Time-Max (tf) 15000 ns
Gate-Emitter Thr Voltage-Max 2.2 V
Gate-Emitter Voltage-Max 12 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Rise Time-Max (tr) 7000 ns
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 7600 ns
Turn-on Time-Nom (ton) 2800 ns

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