Part Details for ISL73128EHVF by Renesas Electronics Corporation
Overview of ISL73128EHVF by Renesas Electronics Corporation
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Part Details for ISL73128EHVF
ISL73128EHVF CAD Models
ISL73128EHVF Part Data Attributes:
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ISL73128EHVF
Renesas Electronics Corporation
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ISL73128EHVF
Renesas Electronics Corporation
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays, CFP, /Tray
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | CFP | |
| Package Description | , | |
| Pin Count | 16 | |
| Manufacturer Package Code | K16.A | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Description | The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance | |
| Samacsys Manufacturer | Renesas Electronics | |
| Samacsys Modified On | 2023-10-24 19:30:29 | |
| Additional Feature | LOW NOISE | |
| Collector Current-Max (IC) | 0.0113 A | |
| Collector-Emitter Voltage-Max | 8 V | |
| Configuration | SEPARATE, 5 ELEMENTS | |
| DC Current Gain-Min (hFE) | 20 | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F16 | |
| JESD-609 Code | e4 | |
| Number of Elements | 5 | |
| Number of Terminals | 16 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1.25 W | |
| Reference Standard | MIL-38535; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 5500 MHz | |
| VCEsat-Max | 0.5 V |