Part Details for ISL73127RHVF by Renesas Electronics Corporation
Overview of ISL73127RHVF by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Part Details for ISL73127RHVF
ISL73127RHVF CAD Models
ISL73127RHVF Part Data Attributes:
|
|
ISL73127RHVF
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
ISL73127RHVF
Renesas Electronics Corporation
Radiation Hardened Ultra High Frequency NPN Transistor Arrays, CFP, /Tray
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | CFP | |
| Package Description | , | |
| Pin Count | 16 | |
| Manufacturer Package Code | K16.A | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Additional Feature | LOW NOISE | |
| Collector Current-Max (IC) | 0.0113 A | |
| Collector-Emitter Voltage-Max | 8 V | |
| Configuration | SEPARATE, 5 ELEMENTS | |
| DC Current Gain-Min (hFE) | 40 | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F16 | |
| JESD-609 Code | e4 | |
| Number of Elements | 5 | |
| Number of Terminals | 16 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.25 W | |
| Reference Standard | MIL-38535; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 8000 MHz | |
| VCEsat-Max | 0.5 V |