Part Details for IS61QDB44M18-250M3L by Integrated Silicon Solution Inc
Overview of IS61QDB44M18-250M3L by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Part Details for IS61QDB44M18-250M3L
IS61QDB44M18-250M3L CAD Models
IS61QDB44M18-250M3L Part Data Attributes
|
|
IS61QDB44M18-250M3L
Integrated Silicon Solution Inc
Buy Now
Datasheet
|
Compare Parts:
IS61QDB44M18-250M3L
Integrated Silicon Solution Inc
DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, LFBGA-165
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 17 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.7 mA | |
| Supply Voltage-Max (Vsup) | 1.89 V | |
| Supply Voltage-Min (Vsup) | 1.71 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Width | 15 mm |
Alternate Parts for IS61QDB44M18-250M3L
This table gives cross-reference parts and alternative options found for IS61QDB44M18-250M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61QDB44M18-250M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K7R641884M-EC25T | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | IS61QDB44M18-250M3L vs K7R641884M-EC25T |
| CY7C1513KV18-250BZC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | IS61QDB44M18-250M3L vs CY7C1513KV18-250BZC |
| CY7C1513V18-250BZXC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | IS61QDB44M18-250M3L vs CY7C1513V18-250BZXC |
| GS8662D18GE-250 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | IS61QDB44M18-250M3L vs GS8662D18GE-250 |
| IS61QDB44M18A-250B3L | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165 | Integrated Silicon Solution Inc | IS61QDB44M18-250M3L vs IS61QDB44M18A-250B3L |
| K7R641884M-FC25 | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | IS61QDB44M18-250M3L vs K7R641884M-FC25 |
| GS8662D18E-250T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | IS61QDB44M18-250M3L vs GS8662D18E-250T |
| CY7C1513KV18-250BZXC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Infineon Technologies AG | IS61QDB44M18-250M3L vs CY7C1513KV18-250BZXC |
| IS61QDB44M18A-250M3L | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | Integrated Silicon Solution Inc | IS61QDB44M18-250M3L vs IS61QDB44M18A-250M3L |
| K7R641884M-FC25S | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | IS61QDB44M18-250M3L vs K7R641884M-FC25S |