Part Details for IS43DR16640BL-3DBLI by Integrated Silicon Solution Inc
Overview of IS43DR16640BL-3DBLI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS43DR16640BL-3DBLI
IS43DR16640BL-3DBLI CAD Models
IS43DR16640BL-3DBLI Part Data Attributes
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IS43DR16640BL-3DBLI
Integrated Silicon Solution Inc
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Datasheet
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IS43DR16640BL-3DBLI
Integrated Silicon Solution Inc
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Package Description | TFBGA, BGA84,9X15,32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.45 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
Length | 12.5 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 84 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.015 A | |
Supply Current-Max | 0.25 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for IS43DR16640BL-3DBLI
This table gives cross-reference parts and alternative options found for IS43DR16640BL-3DBLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16640BL-3DBLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT47H64M16HW-3E:E | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HW-3E:E |
MT47H64M16HW-25EAT:G | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HW-25EAT:G |
K4T1G164QE-HCLE6 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | IS43DR16640BL-3DBLI vs K4T1G164QE-HCLE6 |
MT47H64M16HW-25ELAT:H | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HW-25ELAT:H |
MT47H64M16HR-37EIT:H | DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HR-37EIT:H |
K4T1G164QD-ZCF70 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | IS43DR16640BL-3DBLI vs K4T1G164QD-ZCF70 |
MT47H64M16HW-25ELAT:E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HW-25ELAT:E |
MT47H64M16HR-25ELIT:E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HR-25ELIT:E |
MT47H64M16HR-37EAT:H | DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HR-37EAT:H |
MT47H64M16HR-3AAT:H | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, FBGA-84 | Micron Technology Inc | IS43DR16640BL-3DBLI vs MT47H64M16HR-3AAT:H |