Memory
IS42VM32400G-6BLI
Integrated Silicon Solution Inc
Description: Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Overview of IS42VM32400G-6BLI by Integrated Silicon Solution Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage Energy and Power Systems

Price & Stock for IS42VM32400G-6BLI by Integrated Silicon Solution Inc

Part # Manufacturer Description Stock Price Buy
DISTI # IS42VM32400G-6BLI-ND
DigiKey IC DRAM 128MBIT PAR 90TFBGA Lead time: 12 Weeks Container: Tray Limited Supply - Call
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Part Data Attributes for IS42VM32400G-6BLI by Integrated Silicon Solution Inc

IS42VM32400G-6BLI
Integrated Silicon Solution Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
DSBGA
Package Description
TFBGA, BGA90,9X15,32
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH, ALSO OPERATES AT 2.5V, 1.8V SUPPLY
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
4MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.00001 A
Supply Current-Max
0.115 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. IS42VM32400G-6BLI
    Integrated Silicon Solution Inc
    Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
    VS

Alternate Parts for IS42VM32400G-6BLI

This table gives cross-reference parts and alternative options found for IS42VM32400G-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42VM32400G-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT48LC4M32B2F5-7IT:GTR Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2F5-7IT:GTR
MT48LC4M32B2F5-7ITES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2F5-7ITES:G
M12L128324A-6BIG Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, FBGA-90 Elite Semiconductor Memory Technology Inc IS42VM32400G-6BLI vs M12L128324A-6BIG
MT48LC4M32B2B5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2B5-7ES:G
MT48LC4M32B2B5-7AT Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2B5-7AT
MT48LC4M32B2B5-8XT:G 4MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2B5-8XT:G
MT48LC4M32B2F5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2F5-7ES:G
IS42RM32400G-6BLI Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42VM32400G-6BLI vs IS42RM32400G-6BLI
MT48LC4M32B2B5-7ITES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2B5-7ITES:G
Part Number Description Manufacturer Compare
IS42S32400F-7BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TWBGA-90 Integrated Silicon Solution Inc IS42VM32400G-6BLI vs IS42S32400F-7BLI
IS42S32400-7BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc IS42VM32400G-6BLI vs IS42S32400-7BL
W9812G2GH-6I Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 INCH, ROHS COMPLIANT, TSOP2-86 Winbond Electronics Corp IS42VM32400G-6BLI vs W9812G2GH-6I
HY57V283220LT-8I Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc IS42VM32400G-6BLI vs HY57V283220LT-8I
W9812G21B-75 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp IS42VM32400G-6BLI vs W9812G21B-75
EDS1232AABB-75 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc IS42VM32400G-6BLI vs EDS1232AABB-75
MT48LC4M32B2B5-6:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2B5-6:G
MT48LC4M32B2TG-6AIT:L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 Micron Technology Inc IS42VM32400G-6BLI vs MT48LC4M32B2TG-6AIT:L
K4S283233F-HC750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42VM32400G-6BLI vs K4S283233F-HC750
K4M283233H-HG750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42VM32400G-6BLI vs K4M283233H-HG750

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