Part Details for IS42S83200B-6TLI by Integrated Silicon Solution Inc
Overview of IS42S83200B-6TLI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS42S83200B-6TLI
IS42S83200B-6TLI CAD Models
IS42S83200B-6TLI Part Data Attributes
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IS42S83200B-6TLI
Integrated Silicon Solution Inc
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Datasheet
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IS42S83200B-6TLI
Integrated Silicon Solution Inc
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Width | 10.16 mm |
Alternate Parts for IS42S83200B-6TLI
This table gives cross-reference parts and alternative options found for IS42S83200B-6TLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S83200B-6TLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V56820AT-H | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | IS42S83200B-6TLI vs HY57V56820AT-H |
| K4S560832C-TC750 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | IS42S83200B-6TLI vs K4S560832C-TC750 |
| V54C3256804VHUI7I | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | IS42S83200B-6TLI vs V54C3256804VHUI7I |
| HYB39S256800FE-7 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54 | Infineon Technologies AG | IS42S83200B-6TLI vs HYB39S256800FE-7 |
| V54C3256804VGLI-6 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSSOP2-54 | ProMOS Technologies Inc | IS42S83200B-6TLI vs V54C3256804VGLI-6 |
| TC59SM808BFT-70 | IC 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | IS42S83200B-6TLI vs TC59SM808BFT-70 |
| K4S560832B-TC75 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | IS42S83200B-6TLI vs K4S560832B-TC75 |
| HY57V56820FT-H | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | IS42S83200B-6TLI vs HY57V56820FT-H |
| TC59SM808CFT-70 | IC 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | IS42S83200B-6TLI vs TC59SM808CFT-70 |
| W982508BH-7 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | IS42S83200B-6TLI vs W982508BH-7 |