Part Details for IRLR3717 by Infineon Technologies AG
Overview of IRLR3717 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRLR3717
IRLR3717 CAD Models
IRLR3717 Part Data Attributes
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IRLR3717
Infineon Technologies AG
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Datasheet
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IRLR3717
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 460 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 460 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLR3717
This table gives cross-reference parts and alternative options found for IRLR3717. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3717, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLR3717TRRPBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR3717 vs IRLR3717TRRPBF |
IRLR3717PBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR3717 vs IRLR3717PBF |
IRLR3717PBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR3717 vs IRLR3717PBF |
IRLR3717TRPBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR3717 vs IRLR3717TRPBF |
IRLR3717TR | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR3717 vs IRLR3717TR |
IRLR3717TRPBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR3717 vs IRLR3717TRPBF |
IRLR3717TRRPBF | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR3717 vs IRLR3717TRRPBF |