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Part Details for IRLR2905TRPBF by Infineon Technologies AG
Overview of IRLR2905TRPBF by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR2905TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7986
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Newark | N Channel Mosfet, 55V, 42A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR2905TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1896 |
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$1.2000 / $1.4600 | Buy Now |
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DISTI #
86AK5416
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Newark | Mosfet, N-Ch, 55V, 42A, To-252Aa Rohs Compliant: Yes |Infineon IRLR2905TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6400 | Buy Now |
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DISTI #
IRLR2905PBFCT-ND
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DigiKey | MOSFET N-CH 55V 42A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1856 In Stock |
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$0.5255 / $1.4000 | Buy Now |
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DISTI #
IRLR2905TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 42A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR2905TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4721 / $0.5770 | Buy Now |
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DISTI #
942-IRLR2905TRPBF
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Mouser Electronics | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC RoHS: Compliant | 1842 |
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$0.5250 / $1.3600 | Buy Now |
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DISTI #
70017426
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.027Ohm, ID 42A, D-Pak (TO-252AA),PD 110W | Infineon IRLR2905TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$1.0300 / $1.2100 | RFQ |
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Future Electronics | Single N-Channel 55 V 40 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 6000Reel |
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$0.5150 / $0.5500 | Buy Now |
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Future Electronics | Single N-Channel 55 V 40 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.5150 / $0.5500 | Buy Now |
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Bristol Electronics | 1434 |
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RFQ | ||
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Rochester Electronics | IRLR2905 - HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 8000 |
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$0.5201 / $0.6119 | Buy Now |
Part Details for IRLR2905TRPBF
IRLR2905TRPBF CAD Models
IRLR2905TRPBF Part Data Attributes
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IRLR2905TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR2905TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR2905TRPBF
This table gives cross-reference parts and alternative options found for IRLR2905TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR2905TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRLR2905TRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | International Rectifier | IRLR2905TRPBF vs AUIRLR2905TRR |
| IRLR2905PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR2905TRPBF vs IRLR2905PBF |
| IRLR2905TR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2905TRPBF vs IRLR2905TR |
| AUIRLR2905TRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | International Rectifier | IRLR2905TRPBF vs AUIRLR2905TRL |
| IRLR2905TRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2905TRPBF vs IRLR2905TRL |
| AUIRLR2905TRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | Infineon Technologies AG | IRLR2905TRPBF vs AUIRLR2905TRL |
| IRLR2905TRLPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR2905TRPBF vs IRLR2905TRLPBF |
| AUIRLR2905 | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | Infineon Technologies AG | IRLR2905TRPBF vs AUIRLR2905 |
| IRLR2905TRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2905TRPBF vs IRLR2905TRR |
| AUIRLR2905TR | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | International Rectifier | IRLR2905TRPBF vs AUIRLR2905TR |