Datasheets
IRLR2705TRLPBF by:

Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRLR2705TRLPBF by Infineon Technologies AG

Overview of IRLR2705TRLPBF by Infineon Technologies AG

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Price & Stock for IRLR2705TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 39AH8959
Newark Mosfet, N-Ch, 55V, To-252Aa-3, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.04Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Infineon IRLR2705TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # IRLR2705TRLPBFCT-ND
DigiKey MOSFET N-CH 55V 28A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 2470
In Stock
  • 1 $1.2800
  • 10 $0.8060
  • 100 $0.5319
  • 500 $0.4142
  • 1,000 $0.3763
  • 3,000 $0.3172
  • 6,000 $0.2937
  • 9,000 $0.2835
$0.2835 / $1.2800 Buy Now
Future Electronics Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2350
  • 6,000 $0.2300
  • 9,000 $0.2300
  • 12,000 $0.2250
  • 15,000 $0.2200
$0.2200 / $0.2350 Buy Now
Future Electronics Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel 0
Reel
  • 3,000 $0.2350
  • 6,000 $0.2300
  • 9,000 $0.2300
  • 12,000 $0.2250
  • 15,000 $0.2200
$0.2200 / $0.2350 Buy Now
DISTI # 70803714
Verical Trans MOSFET N-CH Si 55V 28A 3-Pin(2+Tab) DPAK T/R Min Qty: 46 Package Multiple: 1 Americas - 2990
  • 46 $0.6938
  • 68 $0.4638
  • 100 $0.3200
  • 200 $0.3125
  • 500 $0.2875
$0.2875 / $0.6938 Buy Now
Rochester Electronics IRLR2705TRLPBF - PLANAR 40<-<100V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 9052
  • 1 $0.3150
  • 25 $0.3087
  • 100 $0.2961
  • 500 $0.2835
  • 1,000 $0.2677
$0.2677 / $0.3150 Buy Now
DISTI # C1S322000503852
Chip1Stop Trans MOSFET N-CH Si 55V 28A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape 2990
  • 5 $0.6820
  • 50 $0.4280
  • 100 $0.2820
  • 200 $0.2750
  • 500 $0.2380
$0.2380 / $0.6820 Buy Now
CHIPMALL.COM LIMITED MOSFET N-CH 55V 28A DPAK 250
  • 1 $0.3130
$0.3130 Buy Now
LCSC 55V 28A 68W 65m4V14A 2V250uA 1 N-Channel DPAK MOSFETs ROHS 11
  • 1 $0.5443
  • 10 $0.4733
  • 30 $0.4290
  • 100 $0.3837
  • 500 $0.3462
  • 1,000 $0.3374
$0.3374 / $0.5443 Buy Now
Win Source Electronics MOSFET N-CH 55V 28A DPAK 48200
  • 175 $0.2878
  • 375 $0.2693
  • 580 $0.2600
  • 830 $0.2414
  • 1,080 $0.2321
  • 1,350 $0.2229
$0.2229 / $0.2878 Buy Now

Part Details for IRLR2705TRLPBF

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IRLR2705TRLPBF Part Data Attributes

IRLR2705TRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLR2705TRLPBF Infineon Technologies AG Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.051 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 94 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR2705TRLPBF

This table gives cross-reference parts and alternative options found for IRLR2705TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR2705TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR2705TRPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705TRPBF
IRLR2705TRRPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TRRPBF
IRLR2705 Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705
IRLR2705 Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705
IRLR2705PBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705PBF
IRLR2705TR Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TR
IRLR2705TRLPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TRLPBF
IRLR2705PBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705PBF
Part Number Description Manufacturer Compare
IRLR2705 Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705
IRLR2705 Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705
IRLR2705PBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705PBF
IRLR2705TRLPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TRLPBF
IRLR2705TRPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705TRPBF
IRLR2705TRRPBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TRRPBF
IRLR2705TR Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR2705TRLPBF vs IRLR2705TR
IRLR2705PBF Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRLR2705TRLPBF vs IRLR2705PBF

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