Part Details for IRLR120NTRLPBF by Infineon Technologies AG
Overview of IRLR120NTRLPBF by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR120NTRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1792
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Newark | Mosfet, N-Ch, 100V, 10A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR120NTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3663 |
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$0.5000 / $1.1300 | Buy Now |
DISTI #
E02:0323_00175443
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Arrow Electronics | Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2436 | Europe - 6000 |
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$0.4112 / $0.4431 | Buy Now |
DISTI #
85539983
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Verical | Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2436 | Americas - 6000 |
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$0.4121 / $0.4441 | Buy Now |
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Rochester Electronics | IRLR120NTRLPBF - PLANAR >= 100V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1642 |
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RFQ | |
DISTI #
IRLR120NTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 11A, 39W, DPAK Min Qty: 3000 | 0 |
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$0.2460 | RFQ |
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LCSC | 100V 10A 185m6A10V 48W 2V250uA 1 N-Channel DPAK MOSFETs ROHS | 15 |
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$0.4377 / $0.7065 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 10A DPAK | 130544 |
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$0.2210 / $0.2860 | Buy Now |
Part Details for IRLR120NTRLPBF
IRLR120NTRLPBF CAD Models
IRLR120NTRLPBF Part Data Attributes
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IRLR120NTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR120NTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.225 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLR120NTRLPBF
This table gives cross-reference parts and alternative options found for IRLR120NTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR120NTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLR120NTRPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR120NTRLPBF vs IRLR120NTRPBF |
IRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR120NTRLPBF vs IRLR120N |
IRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120N |
AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120N |
AUIRLR120NTRR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120NTRR |
AUIRLR120NTR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120NTR |
AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR120NTRLPBF vs AUIRLR120N |
IRLR120NTR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NTR |
AUIRLR120NTRL | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs AUIRLR120NTRL |
IRLR120NTRLPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR120NTRLPBF vs IRLR120NTRLPBF |