Part Details for IRLMS2002TR by Infineon Technologies AG
Overview of IRLMS2002TR by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLMS2002TR
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R / Ultra Low On-Resistance | MOSFET N-CH 20V 6.5A 6-TSOP | 48300 |
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$0.4710 / $0.7070 | Buy Now |
Part Details for IRLMS2002TR
IRLMS2002TR CAD Models
IRLMS2002TR Part Data Attributes
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IRLMS2002TR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLMS2002TR
Infineon Technologies AG
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MICRO-6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLMS2002TR
This table gives cross-reference parts and alternative options found for IRLMS2002TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS2002TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLMS2002 | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS2002TR vs IRLMS2002 |
IRLMS2002TRPBF | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS2002TR vs IRLMS2002TRPBF |
IRLMS2002PBF | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | International Rectifier | IRLMS2002TR vs IRLMS2002PBF |
IRLMS2002PBF | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | Infineon Technologies AG | IRLMS2002TR vs IRLMS2002PBF |
IRLMS2002TR | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS2002TR vs IRLMS2002TR |