Part Details for IRLM210ATF by Fairchild Semiconductor Corporation
Overview of IRLM210ATF by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRLM210ATF
IRLM210ATF CAD Models
IRLM210ATF Part Data Attributes:
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IRLM210ATF
Fairchild Semiconductor Corporation
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Datasheet
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IRLM210ATF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 27 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.77 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 6.1 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLM210ATF
This table gives cross-reference parts and alternative options found for IRLM210ATF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLM210ATF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQT4N20LTF | Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLM210ATF vs FQT4N20LTF |
IRLM210A | Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Samsung Semiconductor | IRLM210ATF vs IRLM210A |