Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Symbol
Footprint
3D Model
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
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Infineon Technologies AG
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
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IRLL3303TRPBF - Infineon Technologies AG
IRLL3303 - Infineon Technologies AG
IRLL3303 - International Rectifier
IRLL3303TRPBF - International Rectifier
IRLL3303 - International Rectifier
IRLL3303 - Infineon Technologies AG
934066868115 - Nexperia
IRLL3303TRPBF - Infineon Technologies AG
IRLL3303TRPBF - International Rectifier
This table gives cross-reference parts and alternative options found for IRLL3303PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL3303PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
IRLL3303TRPBF
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
Infineon Technologies AG
IRLL3303PBF vs IRLL3303TRPBF
IRLL3303
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Infineon Technologies AG
IRLL3303PBF vs IRLL3303
IRLL3303
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
International Rectifier
IRLL3303PBF vs IRLL3303
IRLL3303TRPBF
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
International Rectifier
IRLL3303PBF vs IRLL3303TRPBF
Part Number
Description
Manufacturer
Compare
IRLL3303
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
International Rectifier
IRLL3303PBF vs IRLL3303
IRLL3303
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Infineon Technologies AG
IRLL3303PBF vs IRLL3303
934066868115
Power Field-Effect Transistor, 5A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Nexperia
IRLL3303PBF vs 934066868115
IRLL3303TRPBF
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
Infineon Technologies AG
IRLL3303PBF vs IRLL3303TRPBF
IRLL3303TRPBF
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
International Rectifier
IRLL3303PBF vs IRLL3303TRPBF