| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRLL3303PBF-ND
|
DigiKey | MOSFET N-CH 30V 4.6A SOT223 Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | ||
|
DISTI #
70017103
|
RS | MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.031Ohm, ID 4.6A, SOT-223,PD 1W, VGS +/-16V | Infineon IRLL3303PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$0.6900 / $0.8600 | RFQ |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
SOT-223, 4 PIN
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
140 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
4.6 A
|
|
Drain-source On Resistance-Max
|
0.031 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
170 pF
|
|
JEDEC-95 Code
|
TO-261AA
|
|
JESD-30 Code
|
R-PDSO-G4
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
4
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
2.1 W
|
|
Pulsed Drain Current-Max (IDM)
|
37 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLL3303TRPBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN | Infineon Technologies AG | IRLL3303PBF vs IRLL3303TRPBF |
| IRLL3303 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | IRLL3303PBF vs IRLL3303 |
| IRLL3303 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | IRLL3303PBF vs IRLL3303 |
| IRLL3303TRPBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN | International Rectifier | IRLL3303PBF vs IRLL3303TRPBF |
