Datasheets
IRLI620G-002 by: International Rectifier

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRLI620G-002 by International Rectifier

Overview of IRLI620G-002 by International Rectifier

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy Medical Imaging Robotics and Drones

Part Details for IRLI620G-002

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IRLI620G-002 Part Data Attributes

IRLI620G-002 International Rectifier
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IRLI620G-002 International Rectifier Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 30 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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