Transistors
IRLI540ATU
Fairchild Semiconductor Corporation
Description: Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Overview of IRLI540ATU by Fairchild Semiconductor Corporation

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  • Distributor Offerings: ( 0 listings )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for IRLI540ATU by Fairchild Semiconductor Corporation

IRLI540ATU
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-262AA
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
522 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
28 A
Drain-source On Resistance-Max
0.058 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
121 W
Pulsed Drain Current-Max (IDM)
98 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRLI540ATU
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
    VS

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