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Part Details for IRLB8721PBF by Infineon Technologies AG
Overview of IRLB8721PBF by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRLB8721PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
10R3513
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Newark | N Channel Mosfet, 30V, 62A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:62A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V, Msl:- Rohs Compliant: Yes |Infineon IRLB8721PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2963 |
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$0.4690 / $0.5540 | Buy Now |
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DISTI #
IRLB8721PBF-ND
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DigiKey | MOSFET N-CH 30V 62A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
16508 In Stock |
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$0.3935 / $1.0500 | Buy Now |
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DISTI #
IRLB8721PBF
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Avnet Americas | Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRLB8721PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 2000 |
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$0.3667 / $0.4452 | Buy Now |
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DISTI #
10R3513
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Avnet Americas | Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: 10R3513) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 333 Partner Stock |
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$0.5590 / $1.1700 | Buy Now |
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DISTI #
942-IRLB8721PBF
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Mouser Electronics | MOSFET MOSFT 30V 62A 9mOhm 8nC Qg RoHS: Compliant | 6523 |
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$0.3930 / $1.0500 | Buy Now |
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DISTI #
70019227
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RS | IRLB8721PBF N-channel MOSFET Transistor, 62 A, 30 V, 3-Pin TO-220AB | Infineon IRLB8721PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.9000 / $1.1300 | RFQ |
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Future Electronics | Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.3600 / $0.4300 | Buy Now |
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Future Electronics | Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.3600 / $0.4400 | Buy Now |
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Rochester Electronics | IRLB8721 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 190 |
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$0.4673 / $0.5498 | Buy Now |
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DISTI #
IRLB8721PBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 62A, 65W, TO220AB Min Qty: 1 | 151 |
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$0.4870 / $0.8980 | Buy Now |
Part Details for IRLB8721PBF
IRLB8721PBF CAD Models
IRLB8721PBF Part Data Attributes:
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IRLB8721PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLB8721PBF
Infineon Technologies AG
Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 98 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 62 A | |
| Drain-source On Resistance-Max | 0.0087 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 110 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |