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Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80P4466
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Newark | Mosfet, N-Ch, 60V, 165A, 175Deg C, 380W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:165A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon IRLB3036PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 428 |
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$2.5900 / $4.3100 | Buy Now |
DISTI #
448-IRLB3036PBF-ND
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DigiKey | MOSFET N-CH 60V 195A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
20230 In Stock |
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$1.9355 / $4.1400 | Buy Now |
DISTI #
IRLB3036PBF
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Avnet Americas | Trans MOSFET N-CH 60V 270A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLB3036PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube | 32 |
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RFQ | |
DISTI #
942-IRLB3036PBF
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Mouser Electronics | MOSFET MOSFT 60V 370A 2.4mOhm 91nC Log Lvl RoHS: Compliant | 3166 |
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$2.0100 / $4.1300 | Buy Now |
DISTI #
70019831
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RS | IRLB3036PBF N-channel MOSFET Transistor, 270 A, 60 V, 3-Pin TO-220AB | Infineon IRLB3036PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$3.6400 / $4.5500 | RFQ |
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Future Electronics | Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 1000Tube |
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$1.5500 / $1.6900 | Buy Now |
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Future Electronics | Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 900Tube |
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$1.8000 / $1.9800 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 195A I(D), 60V, 0.0024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 820 |
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$3.0600 / $6.1200 | Buy Now |
DISTI #
IRLB3036PBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 270A, 380W, TO220AB Min Qty: 1 | 58 |
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$2.6900 / $3.9500 | Buy Now |
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IRLB3036PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLB3036PBF
Infineon Technologies AG
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 195 A | |
Drain-source On Resistance-Max | 0.0024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 380 W | |
Pulsed Drain Current-Max (IDM) | 1100 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |