Datasheets
IRL7833PBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL7833PBF by Infineon Technologies AG

Overview of IRL7833PBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRL7833PBF

Part # Distributor Description Stock Price Buy
DISTI # 97K2391
Newark Mosfet Transistor, N Channel, 150 A, 30 V, 3.8 Mohm, 10 V, 2.3 V Rohs Compliant: Yes |Infineon IRL7833PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 392
  • 1 $2.0900
  • 10 $1.7400
  • 100 $1.4800
  • 500 $1.4500
  • 1,000 $1.4400
$1.4400 / $2.0900 Buy Now
DISTI # IRL7833PBF-ND
DigiKey MOSFET N-CH 30V 150A TO220AB Min Qty: 1000 Lead time: 12 Weeks Container: Tube Limited Supply - Call
  • 1,000 $0.8433
$0.8433 Buy Now
DISTI # IRL7833PBF
Avnet Americas Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL7833PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 299 Partner Stock
RFQ
DISTI # IRL7833PBF
Avnet Americas Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL7833PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Container: Tube 0
  • 1,000 $1.0337
$1.0337 Buy Now
DISTI # 942-IRL7833PBF
Mouser Electronics MOSFETs MOSFT 30V 150A 32nV 3.8mOhm Qg log lvl RoHS: Compliant 1122
  • 1 $1.9100
  • 10 $1.5800
  • 100 $1.3000
  • 1,000 $1.2900
$1.2900 / $1.9100 Buy Now
Future Electronics Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube 0
Tube
  • 50 $1.4100
  • 200 $1.3700
  • 750 $1.3400
  • 2,000 $1.3100
  • 5,000 $1.2700
$1.2700 / $1.4100 Buy Now
Future Electronics Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube 0
Tube
  • 50 $1.4100
  • 200 $1.3700
  • 750 $1.3400
  • 2,000 $1.3100
  • 5,000 $1.2700
$1.2700 / $1.4100 Buy Now
Rochester Electronics IRL7833 - N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 299
  • 1 $0.9056
  • 25 $0.8875
  • 100 $0.8513
  • 500 $0.8150
  • 1,000 $0.7698
$0.7698 / $0.9056 Buy Now
DISTI # IRL7833PBF
TME Transistor: N-MOSFET, unipolar, 30V, 150A, 140W, TO220AB Min Qty: 1 74
  • 1 $1.8100
  • 10 $1.4400
  • 50 $1.3100
  • 100 $1.2500
  • 500 $1.1300
  • 1,000 $1.0700
$1.0700 / $1.8100 Buy Now
DISTI # C1S322000501906
Chip1Stop MOSFET RoHS: Compliant Container: Tube 999
  • 1 $2.0700
  • 10 $0.9920
  • 50 $0.9140
  • 100 $0.8960
  • 500 $0.8950
$0.8950 / $2.0700 Buy Now
DISTI # SP001550382
EBV Elektronik Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB (Alt: SP001550382) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRL7833PBF

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IRL7833PBF Part Data Attributes

IRL7833PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL7833PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 560 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL7833PBF

This table gives cross-reference parts and alternative options found for IRL7833PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL7833PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL7833PBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRL7833PBF vs IRL7833PBF
IRL7833 Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRL7833PBF vs IRL7833
Part Number Description Manufacturer Compare
IRL7833PBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRL7833PBF vs IRL7833PBF

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