Datasheets
IRL620SPBF by:

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3 PIN

Part Details for IRL620SPBF by Vishay Intertechnologies

Overview of IRL620SPBF by Vishay Intertechnologies

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Price & Stock for IRL620SPBF

Part # Distributor Description Stock Price Buy
DISTI # 56AJ9936
Newark Mosfet, N-Ch, 200V, 5.2A, To-263 Rohs Compliant: Yes |Vishay IRL620SPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $2.1400
  • 10 $1.7400
  • 25 $1.6400
  • 50 $1.5500
  • 100 $1.4500
  • 500 $1.2300
$1.2300 / $2.1400 Buy Now
DISTI # IRL620SPBF
TME Transistor: N-MOSFET, unipolar, 200V, 5.2A, Idm: 21A, 50W Min Qty: 1 0
  • 1 $1.0100
  • 10 $0.9200
  • 50 $0.8100
  • 250 $0.7200
  • 1,000 $0.6800
$0.6800 / $1.0100 RFQ

Part Details for IRL620SPBF

IRL620SPBF CAD Models

IRL620SPBF Part Data Attributes

IRL620SPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRL620SPBF Vishay Intertechnologies Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL620SPBF

This table gives cross-reference parts and alternative options found for IRL620SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL620SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN International Rectifier IRL620SPBF vs IRL620STRLPBF
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies IRL620SPBF vs IRL620STRLPBF
SIHL620S-GE3 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRL620SPBF vs SIHL620S-GE3
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRL620SPBF vs IRL620STRLPBF
IRL620S Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRL620SPBF vs IRL620S
SIHL620S-GE3 TRANSISTOR 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRL620SPBF vs SIHL620S-GE3
Part Number Description Manufacturer Compare
SIHL620S-GE3 TRANSISTOR 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRL620SPBF vs SIHL620S-GE3
IRL620S Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRL620SPBF vs IRL620S
SIHL620STRL-GE3 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRL620SPBF vs SIHL620STRL-GE3
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRL620SPBF vs IRL620STRLPBF
IRL620SR Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation IRL620SPBF vs IRL620SR
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN International Rectifier IRL620SPBF vs IRL620STRLPBF
IRL620STRLPBF Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies IRL620SPBF vs IRL620STRLPBF

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