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Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K3057
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Newark | Mosfet, N-Ch, 55V, 77A, 175Deg C, 130W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:77A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRL3705NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8340 / $1.7600 | Buy Now |
DISTI #
IRL3705NPBF-ND
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DigiKey | MOSFET N-CH 55V 89A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1250 In Stock |
|
$0.7760 / $1.8500 | Buy Now |
DISTI #
IRL3705NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB T/R - Rail/Tube (Alt: IRL3705NPBF) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.6984 / $0.8536 | Buy Now |
DISTI #
942-IRL3705NPBF
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Mouser Electronics | MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB RoHS: Compliant | 1280 |
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$0.7760 / $1.6500 | Buy Now |
DISTI #
70017090
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.01Ohm, ID 89A, TO-220AB, PD 170W, VGS +/-16V | Infineon IRL3705NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.6800 / $2.1000 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 2000Tube |
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$0.4700 / $0.5550 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 1350Tube |
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$0.7600 / $0.9050 | Buy Now |
DISTI #
IRL3705NPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 89A, 130W, TO220AB Min Qty: 1 | 0 |
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$1.3900 / $2.0500 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 61 |
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$1.7635 / $1.9465 | Buy Now |
DISTI #
TMOSP12550
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Rutronik | N-CH 55V 77A 10mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 800 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$0.7987 / $1.0353 | Buy Now |
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IRL3705NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL3705NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 89 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 310 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |