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Transistors / Power Field-Effect Transistors / IRL2910PBF
Datasheets
IRL2910PBF by:

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL2910PBF by Infineon Technologies AG

Overview of IRL2910PBF by Infineon Technologies AG

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Price & Stock for IRL2910PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7744
Newark N Channel Mosfet, 100V, 55A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:55A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Infineon IRL2910PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 70017085
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.026Ohm, ID 55A, TO-220AB, PD 200W, VGS +/-16V | Infineon IRL2910PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.3000
  • 10 $1.2300
  • 50 $1.1700
  • 100 $1.1000
$1.1000 / $1.3000 RFQ
Future Electronics Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0200
  • 700 $0.9950
  • 1,400 $0.9700
  • 1,750 $0.9650
  • 5,250 $0.9200
$0.9200 / $1.0200 Buy Now
Ameya Holding Limited Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3 472
RFQ

Part Details for IRL2910PBF

IRL2910PBF CAD Models

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IRL2910PBF Part Data Attributes

Parametric Data
IRL2910PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL2910PBF Infineon Technologies AG Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 190 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL2910PBF

This table gives cross-reference parts and alternative options found for IRL2910PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910PBF vs IRL2910STRLPBF

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