Datasheets
IRL2203NSTRLPBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRL2203NSTRLPBF by Infineon Technologies AG

Overview of IRL2203NSTRLPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRL2203NSTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRL2203NSTRLPBF
TME Transistor: N-MOSFET, unipolar, 30V, 116A, 170W, D2PAK Min Qty: 800 0
  • 800 $0.6700
$0.6700 RFQ
NexGen Digital   10
RFQ
Win Source Electronics MOSFET N-CH 30V 116A D2PAK 6340
  • 55 $0.9545
  • 130 $0.7832
  • 200 $0.7588
  • 275 $0.7343
  • 355 $0.7098
  • 475 $0.6364
$0.6364 / $0.9545 Buy Now

Part Details for IRL2203NSTRLPBF

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IRL2203NSTRLPBF Part Data Attributes

IRL2203NSTRLPBF Infineon Technologies AG
Buy Now Datasheet
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IRL2203NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 1996-11-01
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL2203NSTRLPBF

This table gives cross-reference parts and alternative options found for IRL2203NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2203NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL2203NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRL2203NSTRLPBF vs IRL2203NS
IRL2203NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRL2203NSTRLPBF vs IRL2203NSPBF
IRL2203NSTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRL2203NSTRLPBF vs IRL2203NSTRRPBF

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