There are no models available for this part yet.
Overview of IRHN7150PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRHN7150PBF by International Rectifier
Part Data Attributes for IRHN7150PBF by International Rectifier
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Pbfree Code
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Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Package Description
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CHIP CARRIER, R-CBCC-N3
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Pin Count
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3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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RADIATION HARDENED
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Avalanche Energy Rating (Eas)
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500 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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34 A
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Drain-source On Resistance-Max
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0.07 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-CBCC-N3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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CHIP CARRIER
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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100 W
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Pulsed Drain Current-Max (IDM)
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136 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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BOTTOM
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Time@Peak Reflow Temperature-Max (s)
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40
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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300 ns
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Turn-on Time-Max (ton)
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235 ns
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Alternate Parts for IRHN7150PBF
This table gives cross-reference parts and alternative options found for IRHN7150PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHN7150PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXVH2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRHN7150PBF vs JANTXVH2N7268U |
| JANSH2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN | International Rectifier | IRHN7150PBF vs JANSH2N7268U |
| IRHN7150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Infineon Technologies AG | IRHN7150PBF vs IRHN7150 |
| IRHN8150PBF | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Infineon Technologies AG | IRHN7150PBF vs IRHN8150PBF |
| 2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHN7150PBF vs 2N7268U |
| IRHN7150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | International Rectifier | IRHN7150PBF vs IRHN7150 |
| 2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHN7150PBF vs 2N7268U |
| JANSH2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Infineon Technologies AG | IRHN7150PBF vs JANSH2N7268U |
| 2N7268U | Power Field-Effect Transistor, 34A I(D), 100V, 0.132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, 3 PIN | Microsemi Corporation | IRHN7150PBF vs 2N7268U |
| IRHN8150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | International Rectifier | IRHN7150PBF vs IRHN8150 |