IRHM8064PBF
Description: Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

Overview of IRHM8064PBF by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 3 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IRHM8064PBF by Infineon Technologies AG
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Part Data Attributes for IRHM8064PBF by Infineon Technologies AG

IRHM8064PBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED; RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
35 A
Drain-source On Resistance-Max
0.021 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
JESD-30 Code
S-CSFM-P3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
140 A
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRHM8064PBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
    VS

Alternate Parts for IRHM8064PBF

This table gives cross-reference parts and alternative options found for IRHM8064PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM8064PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SFFX054Z Power Field-Effect Transistor, 35A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) IRHM8064PBF vs SFFX054Z
SFF054Z Power Field-Effect Transistor, 35A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) IRHM8064PBF vs SFF054Z
IRHM7064PBF Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG IRHM8064PBF vs IRHM7064PBF

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