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Overview of IRHLG77214 by Infineon Technologies AG
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRHLG77214 by Infineon Technologies AG
Part Data Attributes for IRHLG77214 by Infineon Technologies AG
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Rohs Code
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No
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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IN-LINE, R-PDIP-T14
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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50.4 mJ
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Configuration
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SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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250 V
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Drain Current-Max (ID)
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0.8 A
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Drain-source On Resistance-Max
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1.1 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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MO-036AB
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JESD-30 Code
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R-PDIP-T14
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Moisture Sensitivity Level
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1
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Number of Elements
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4
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Number of Terminals
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14
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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IN-LINE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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3.2 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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