Datasheets
IRGIB15B60KD1P by:

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3

Part Details for IRGIB15B60KD1P by Infineon Technologies AG

Overview of IRGIB15B60KD1P by Infineon Technologies AG

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Part Details for IRGIB15B60KD1P

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IRGIB15B60KD1P Part Data Attributes

IRGIB15B60KD1P Infineon Technologies AG
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IRGIB15B60KD1P Infineon Technologies AG Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, FULL PACK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 19 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 73 ns
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Qualification Status Not Qualified
Rise Time-Max (tr) 35 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 250 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for IRGIB15B60KD1P

This table gives cross-reference parts and alternative options found for IRGIB15B60KD1P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGIB15B60KD1P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRGIB15B60KD1PPBF Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 International Rectifier IRGIB15B60KD1P vs IRGIB15B60KD1PPBF
IRGIB15B60KD1P Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 International Rectifier IRGIB15B60KD1P vs IRGIB15B60KD1P
Part Number Description Manufacturer Compare
IRGIB15B60KD1P Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 International Rectifier IRGIB15B60KD1P vs IRGIB15B60KD1P
IRGIB15B60KD1PPBF Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 International Rectifier IRGIB15B60KD1P vs IRGIB15B60KD1PPBF

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