Part Details for IRG4RC10UPBF by International Rectifier
Overview of IRG4RC10UPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRG4RC10UPBF
IRG4RC10UPBF CAD Models
IRG4RC10UPBF Part Data Attributes
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IRG4RC10UPBF
International Rectifier
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Datasheet
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IRG4RC10UPBF
International Rectifier
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | TO-252AA, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA FAST | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8.5 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 180 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 330 ns | |
Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for IRG4RC10UPBF
This table gives cross-reference parts and alternative options found for IRG4RC10UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRG4RC10UTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UPBF vs IRG4RC10UTRPBF |
IRG4RC10UTRLPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UPBF vs IRG4RC10UTRLPBF |
IRG4RC10UTRR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UPBF vs IRG4RC10UTRR |
IRG4RC10U | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UPBF vs IRG4RC10U |
IRG4RC10U | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | International Rectifier | IRG4RC10UPBF vs IRG4RC10U |
IRG4RC10UTRPBF | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UPBF vs IRG4RC10UTRPBF |
IRG4RC10UTR | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, TO-252AA, DPAK-3 | Infineon Technologies AG | IRG4RC10UPBF vs IRG4RC10UTR |